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| www.fairchildsemi.com FS6M07652RTC Features * * * * * * * * * * Fairchild Power Switch(FPS) Description The Fairchild Power Switch(FPS) product family is specially designed for an off line SMPS with minimal external components. The Fairchild Power Switch(FPS) consist of a high voltage power SenseFET and a current mode PWM IC. Included PWM controller features integrated fixed oscillator, the under voltage lock out, the leading edge blanking, the optimized gate turn-on/turn-off driver, the thermal shutdown protection, the over voltage protection, and the temperature compensated precision current sources for the loop compensation and a fault protection circuitry. compared with a discrete MOSFET and a controller or a RCC switching converter solution, a Fairchild Power Switch(FPS) can reduce total component count, design size, and weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for the cost effective LCD monitor power supply. TO-220F-5L Fixed Frequency Internal Burst Mode Controller for Stand-by Mode Pulse By Pulse Over Current Limiting Over Current Protection(Auto Restart Mode) Over Voltage Protection (Auto Restart Mode) Over Load Protection(Auto Restart Mode) Internal Thermal Shutdown Function(Latch Mode) Under Voltage Lockout Internal High Voltage Sense FET Soft Start Application * LCD Monitor SMPS * Adaptor 1 1. Drain 2. GND 3. VCC 4. Feedback 5. SoftStart Internal Block Diagram VCC Drain 3 Vref OSC Vref Vfb Vth=1V Burst mode controller 1 SoftStart 5 Internal Bias Vref UVLO S Q Ron Vcc Vth=11V/12V R Roff PWM Feedbock 4 Ifb 2.5R R Vcc Vfb Offset Rsenese Vref Idelay OLP Vth=7.5V Vcc Vth=33V OVP OCL Filter (130nsec) Vth=2V 2 GND S UVLO Reset (Vcc=9V) Q Q S R Power-on Reset (Vcc=6.5V) TSD (Tj=160 ) R Rev.1.0.4 (c)2003 Fairchild Semiconductor Corporation FS6M07652RTC Absolute Maximum Ratings (Ta=25C, unless otherwise specified) Characteristic Drain-Gate Voltage (RGS=1M) Gate-Source (GND) Voltage Drain Current Pulsed (1) Symbol VDGR VGS IDM ID ID IAS(EAS) VCC, MAX VFB VSS PD(Watt H/S) Darting Tj TA TSTG Value 650 30 14.4 3.6 2.28 17(570) 35 -0.3 to VCC -0.3 to 10 46 0.37 +150 -25 to +85 -55 to +150 Unit V V ADC ADC ADC A(mJ) V V V W W/C C C C Continuous Drain Current (Tc = 25C) Continuous Drain Current (TC=100C) Single Pulsed Avalanche Current(3)(Energy (2)) Maximum Supply Voltage Input Voltage Range Total Power Dissipation Operating Junction Temperature Operating Ambient Temperature Storage Temperature Range Notes: 1. Repetitive rating: Pulse width limited by maximum junction temperature 2. L=81mH, starting Tj=25C 3. L=13uH, starting Tj=25C 2 FS6M07652RTC Electrical Characteristics (SFET part) (Ta=25C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Static Drain-Source On Resistance (1) Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn On Delay Time Rise Time Turn Off Delay Time Fall Time Total Gate Charge (Gate-Source+Gate-Drain) Gate-Source Charge Gate-Drain (Miller) Charge Note: 1. Pulse test : Pulse width 300S, duty 2% 1 2. S = --R (2) Symbol BVDSS IDSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Condition VGS=0V, ID=250A VDS=650V, VGS=0V VDS=520V VGS=0V, TC=125C VGS=10V, ID=1.8A VDS=50V, ID=1.8A VGS=0V, VDS=25V, f = 1MHz VDD=325V, ID=6.5A (MOSFET switching time is essentially independent of operating temperature) VGS=10V, ID=6.5A, VDS=520V (MOSFET switching time is essentially independent of operating temperature) Min. 650 - Typ. 1.3 3.3 1200 125 23 22 70 105 65 40 6.5 18 Max. 200 300 1.6 - Unit V A A S pF nS nC 3 FS6M07652RTC Electrical Characteristics (Continued) (Ta=25C unless otherwise specified) Parameter UVLO SECTION Start Threshold Voltage Stop Threshold Voltage OSCILLATOR SECTION Initial Frequency Voltage Stability Temperature Stability (2) Maximum Duty Cycle Minimum Duty Cycle FEEDBACK SECTION Feedback Source Current Shutdown Feedback Voltage Shutdown Delay Current SOFTSTART SECTION Softstart Voltage Softstart Current BURST MODE SECTION Burst Mode Low Threshold Voltage Burst Mode High Threshold Voltage Burst Mode Enable Feedback Voltage Burst Mode Peak Current Limit (4) Burst Mode Frequency CURRENT LIMIT(SELF-PROTECTION)SECTION Peak Current Limit (4) PROTECTION SECTION Over Voltage Protection Over Current Latch Voltage (3) Thermal Shutdown Temp (2) TOTAL DEVICE SECTION Start Up Current Operating Supply Current (1) ISTART IOP IOP(MIN) IOP(MAX) VFB = GND, VCC = 14V VFB = GND, VCC = 16V VFB = GND, VCC = 12V VFB = GND, VCC = 30V 10 15 mA 0.1 0.17 mA VOVP VOCL TSD VCC 29V 29 1.8 140 33 2.0 160 37 2.2 V V C IOVER 1.76 2.0 2.24 A VBURL VBURH VBEN IBURPK FBUR VFB = 0V VFB = 0V VCC = 10.5V VCC = 10.5V, VFB = 0V VCC = 10.5V, VFB = 0V 10.4 11.4 0.7 0.38 63 11.0 12.0 1.0 0.5 70 11.6 12.6 1.3 0.62 77 V V V A kHz VSS ISS VFB = 2 VSS = V 4.7 0.8 5.0 1.0 5.3 1.2 V mA IFB VSD IDELAY VFB = GND VFB 6.9V VFB = 5V 0.7 6.9 3.2 0.9 7.5 4.0 1.1 8.1 4.8 mA V A FOSC FSTABLE FOSC DMAX DMIN 12V VCC 23V -25C Ta 85C 63 0 0 75 70 1 5 80 77 3 10 85 0 kHz % % % % VSTART VSTOP VFB = GND VFB = GND 14 8 15 9 16 10 V V Symbol Condition Min. Typ. Max. Unit Notes: 1. These parameters are the current flowing in the control IC. 2. These parameters, although guaranteed at the design, are not 100% tested in production. 3. These parameters, although guaranteed, are tested in EDS(wafer test) process. 4. These parameters indicate inductor current. 4 FS6M07652RTC Typical Performance Characteristics 0.150 [mA] Start Up Current vs. Temp 11.0 [mA] Operating Current vs. Temp 0.125 10.5 0.100 10.0 0.075 9.5 0.050 -25 0 25 50 75 100 125 150 9.0 -25 0 25 50 75 100 125 150 Temp Temp Figure 1. Start Up Current vs. Temp Figure 2. Operating Current vs. Temp 16.0 [V] Start Threshold Voltage vs. Temp 10.0 [V] Stop Threshold Voltage vs. Temp 15.5 9.5 15.0 9.0 14.5 8.5 14.0 -25 0 25 50 75 100 125 150 8.0 -25 0 25 50 75 100 125 150 Temp Temp Figure 3. Start Threshold Voltage vs. Temp Figure 4. Stop Threshold Voltage vs. Temp [KHz] 76 74 Initial Freqency vs. Temp 81.0 [%] Maximum Duty vs. Temp 80.5 72 70 68 79.5 66 64 -25 0 25 50 75 100 125 150 79.0 -25 0 25 50 75 100 125 150 80.0 Temp Figure 5. Initial Freqency vs. Temp Temp Figure 6. Maximum Duty vs. Temp 5 FS6M07652RTC Typical Performance Characteristics (Continued) 0.45 0.40 0.35 [V] Feedback Offset Voltage vs. Temp 1.1 [mA] Feedback Source Current vs. Temp 1.0 0.9 0.30 0.25 0.20 -25 0.8 0 25 50 75 100 125 150 0.7 -25 0 25 50 75 100 125 150 Temp Temp Figure 7. Feedback Offset Voltage vs. Temp Figure 8. Feedback Source Current vs. Temp 4.8 [uA] ShutDown Delay Current vs. Temp [V] ShutDown Feedback Voltage vs. Temp 7.60 4.4 7.55 4.0 7.50 3.6 7.45 3.2 -25 0 25 50 75 100 125 150 7.40 -25 0 25 50 75 100 125 150 Temp Temp Figure 9. ShutDown Delay Current vs. Temp Figure 10. ShutDown Feedback Voltage vs. Temp 5.02 [V] Softstart Voltage vs. Temp 34.0 [V] 5.01 33.5 5.00 33.0 32.5 4.99 4.98 -25 0 25 50 75 100 125 150 32.0 -25 0 25 Temp 50 75 Temp 100 125 150 Figure 11. Softstart Voltage vs. Temp Figure 12. Over Voltage Protection vs. Temp 6 FS6M07652RTC Typical Performance Characteristics (Continued) [V] 11.2 Burst Mode Low Voltage vs. Temp 12.2 [V] Burst Mode High Voltage vs. Temp 11.1 12.1 11.0 12.0 10.9 11.9 10.8 -25 0 25 50 75 100 125 150 11.8 -25 0 25 50 75 100 125 150 Temp Temp Figure 13. Burst Mode Low Voltage vs. Temp Figure 14. Burst Mode High Voltage vs. Temp [A] Burst Mode Peak Current vs. Temp 0.60 [A] 2.10 Over Current Limit vs. Temp 0.55 2.05 0.50 2.00 0.45 1.95 0.40 -25 0 25 50 75 100 125 150 1.90 -25 0 25 50 75 100 125 150 Temp Temp Figure 15. Burst Mode Peak Current vs. Temp Figure 16. Over Current Limit vs. Temp 7 FS6M07652RTC Package Dimensions TO-220F-5L 8 FS6M07652RTC Package Dimensions (Continued) TO-220F-5L(Forming) 9 FS6M07652RTC Ordering Information Product Number FS6M07652RTCTU FS6M07652RTCYDT TU : Non Forming Type YDT : Forming Type Package TO-220F-5L TO-220F-5L(Forming) Marking Code 6M07652R C BVdss 650V Rds(on) 1.6 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. www.fairchildsemi.com 8/25/03 0.0m 001 Stock#DSxxxxxxxx 2003 Fairchild Semiconductor Corporation 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. |
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